CALL FOR PAPERS

Call for Papers

High quality contributions in the following areas are solicited:

1.	Advanced SOI materials and structures, innovative SOI-like devices.
2.	Alternative transistor architectures (FDSOI, Nanowire, Nanosheet, FinFET, MuGFET, vertical MOSFET, FeFET and TFET, MEMS/NEMS, Beyond-CMOS).
3.	New channel materials for CMOS (strained Si/Ge, III-V, carbon nanotubes; graphene and other 2D materials).
4.	Properties of ultra-thin semiconductor films and buried oxides, defects, interface quality; thin gate dielectrics: high-κ and ferroelectric materials for switches and memory.
5.	New functionalities and innovative devices in the More than Moore domain: nanoelectronic sensors, biosensor devices, memrisors, neuromorphic computing devices, quantum computing devices, energy harvesting devices, RF devices, imagers, integrated photonics (on SOI), etc.
6.	Transport phenomena, compact modeling, device simulation, front- and back-end process simulation.
7.	CMOS scaling perspectives; device/circuit level performance evaluation; switches and memory scaling; three-dimensional integration of devices and circuits, heterogeneous integration.
8.	Advanced test structures and characterization techniques, parameter extraction, reliability and variability assessment techniques for new materials and novel devices.
9.	Memory devices, memristors, hardware for unconventional computing such as neuromorphic, in-memory, in-sensor and quantum computing.

Original 2-page abstracts with illustrations will be reviewed by the Scientific Committee. The accepted contributions will be published as 4-page letters in a special issue of the Elsevier journal Solid-State Electronics.

Extended versions of outstanding papers will be published in a further special issue of Solid-State Electronics.

The “Androula Nassiopoulou Best Paper Award" will be attributed by the SINANO institute.

A best poster award will be attributed by ELSEVIER.

Posters should be printed at maximal A0 size. (84 x 118 cm).