CALL FOR PAPERS
1. | Advanced SOI materials and structures, innovative SOI-like devices. |
2. | Alternative transistor architectures (FDSOI, Nanowire, Nanosheet, FinFET, MuGFET, vertical MOSFET, FeFET and TFET, MEMS/NEMS, Beyond-CMOS). |
3. | New channel materials for CMOS (strained Si/Ge, III-V, carbon nanotubes; graphene and other 2D materials). |
4. | Properties of ultra-thin semiconductor films and buried oxides, defects, interface quality; thin gate dielectrics: high-κ and ferroelectric materials for switches and memory. |
5. | New functionalities and innovative devices in the More than Moore domain: nanoelectronic sensors, biosensor devices, memrisors, neuromorphic computing devices, quantum computing devices, energy harvesting devices, RF devices, imagers, integrated photonics (on SOI), etc. |
6. | Transport phenomena, compact modeling, device simulation, front- and back-end process simulation. |
7. | CMOS scaling perspectives; device/circuit level performance evaluation; switches and memory scaling; three-dimensional integration of devices and circuits, heterogeneous integration. |
8. | Advanced test structures and characterization techniques, parameter extraction, reliability and variability assessment techniques for new materials and novel devices. |
9. | Memory devices, memristors, hardware for unconventional computing such as neuromorphic, in-memory, in-sensor and quantum computing. |